A 0.7-1.2 gigahertz, single-die cascode, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifier (LNA) for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters, and base stations. The new LNA offers very low noise figure and high linearity along with excellent return loss and gain flatness in a small 2x2 mm, no lead plastic package. On-die active bias design of the SKY67111-396LF ensures consistent performance and enables unconditional stability with a 5V supply. The rugged cascode design achieves nearly 19 dBm IIP3, 0.5 dB noise figure, and >20 dB gain. The bias circuit allows the device current to be set independently from the Vdd supply, enabling optimal efficiency for a wide range of applications.
This amplifier solution is ideal for wireless infrastructure OEMs having receiver applications that require highly efficient amplification with high gain and flat gain response. In addition, its exceptional linearity makes the part an excellent linear amplifier for transmitter applications.
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